Temperature Performance of Doping-Free Top-Gate CNT Field-Effect Transistors: Potential for Low- and High-Temperature Electronics
Article first published online: 4 APR 2011
Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Advanced Functional Materials
Volume 21, Issue 10, pages 1843–1849, May 24, 2011
How to Cite
Pei, T., Zhang, Z., Wang, Z., Ding, L., Wang, S. and Peng, L.-M. (2011), Temperature Performance of Doping-Free Top-Gate CNT Field-Effect Transistors: Potential for Low- and High-Temperature Electronics. Adv. Funct. Mater., 21: 1843–1849. doi: 10.1002/adfm.201002563
- Issue published online: 16 MAY 2011
- Article first published online: 4 APR 2011
- Manuscript Revised: 15 FEB 2011
- Manuscript Received: 5 DEC 2010
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