Photoluminescence Properties of a Nearly Intrinsic Single InN Nanowire

Authors

  • Yi-Lu Chang,

    1. Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 2A7, Canada, Phone: 1 514 398 7114
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  • Zetian Mi,

    Corresponding author
    1. Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 2A7, Canada, Phone: 1 514 398 7114
    • Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 2A7, Canada, Phone: 1 514 398 7114.
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  • Feng Li

    1. Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 2A7, Canada, Phone: 1 514 398 7114
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Abstract

In this paper, the achievement of nearly intrinsic InN nanowire is reported. With the use of an in situ deposited In seeding layer, nearly defect-free, non-tapered InN nanowires are grown directly on Si(111) substrates by molecular beam epitaxy. The photoluminescence emission of a single InN nanowire is analyzed, which exhibits, for the first time, a very narrow (∼13 meV) spectral linewidth, a clear band filling effect with the increase of excitation power, and a significant red shift of the peak energy with increasing temperature. Detailed analysis confirms the InN nanowire has a very low residual doping of ∼1 × 1016 cm−3, or less. It is further suggested that there is a small, or negligible level of electron accumulation at the lateral nonpolar surfaces of nearly intrinsic InN nanowires, which is in direct contrast to the commonly observed surface electron accumulation of n-type degenerate InN.

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