Fabrication of Releasable Single-Crystal Silicon–Metal Oxide Field-Effect Devices and Their Deterministic Assembly on Foreign Substrates

Authors

  • Hyun-Joong Chung,

    1. Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
    Current affiliation:
    1. H.-J.C and T.-i.K. contributed equally to this work.
    Search for more papers by this author
  • Tae-il Kim,

    1. Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
    Current affiliation:
    1. H.-J.C and T.-i.K. contributed equally to this work.
    Search for more papers by this author
  • Hoon-Sik Kim,

    1. Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
    Search for more papers by this author
  • Spencer A. Wells,

    1. Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
    Search for more papers by this author
  • Sungjin Jo,

    1. Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
    Search for more papers by this author
  • Numair Ahmed,

    1. Department of Mechanical Science and Engineering, Center for Nanoscale Chemical-Electrical-Mechanical, Manufacturing Systems, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
    Search for more papers by this author
  • Yei Hwan Jung,

    1. Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
    Search for more papers by this author
  • Sang Min Won,

    1. Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
    Search for more papers by this author
  • Christopher A. Bower,

    1. Semprius Inc., 4915 Prospectus Dr., Suite C, Durham, NC 27713, USA
    Search for more papers by this author
  • John A. Rogers

    Corresponding author
    1. Department of Materials Science and Engineering, Chemistry, Science and Engineering, Electrical, and Computer Engineering, Beckman Institute for Advanced Science and Technology, and Frederick, Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
    • Department of Materials Science and Engineering, Chemistry, Science and Engineering, Electrical, and Computer Engineering, Beckman Institute for Advanced Science and Technology, and Frederick, Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA.
    Search for more papers by this author

Abstract

A new class of thin, releasable single-crystal silicon semiconductor device is presented that enables integration of high-performance electronics on nearly any type of substrate. Fully formed metal oxide–semiconductor field–effect transistors with thermally grown gate oxides and integrated circuits constructed with them demonstrate the ideas in devices mounted on substrates ranging from flexible sheets of plastic, to plates of glass and pieces of aluminum foil. Systematic study of the electrical properties indicates field-effect mobilities of ≈710 cm2 V−1 s−1, subthreshold slopes of less than 0.2 V decade−1 and minimal hysteresis, all with little to no dependence on the properties of the substrate due to bottom silicon surfaces that are passivated with thermal oxide. The schemes reported here require only interconnect metallization to be performed on the final device substrate, which thereby minimizes the need for any specialized processing technology, with important consequences in large-area electronics for display systems, flexible/stretchable electronics, or other non-wafer-based devices.

Ancillary