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Two- and Three-Terminal Resistive Switches: Nanometer-Scale Memristors and Memistors

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Abstract

The logical relationship between two previously defined “memory resistors” is revealed by constructing and experimentally demonstrating a three-terminal memistor equivalent circuit using two two-terminal memristors. A technique is then presented, using nanoimprint lithography in combination with angle evaporation, to fabricate a single nanoscale device with a footprint of 4F2, where F is the minimum lithographic feature size, that can be operated as either a two-terminal lateral memristor or a three-terminal memistor inside a crossbar structure. These devices exhibit repeatable bipolar nonvolatile switching behavior with up to 103 ON/OFF conductance ratios, as well as the desired three-terminal behavior.

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