Get access

Light-Emitting Field-Effect Transistors Consisting of Bilayer-Crystal Organic Semiconductors

Authors

  • Kentaro Kajiwara,

    1. Department of Macromolecular Science and Engineering, Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan
    Current affiliation:
    1. Basic Research Center, Advanced Materials Research Laboratories, Polymer Chemistry Research Unit, Toray Industries, Inc., 3-3-3 Sonoyama, Otsu, Shiga 520-0842, Japan
    Search for more papers by this author
  • Kohei Terasaki,

    1. Department of Macromolecular Science and Engineering, Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan
    Current affiliation:
    1. R&D Department 55, Process R&D Division, Corporate R&D Division, Kyocera Mita Corporation, 2-28, 1-Chome, Tamatsukuri, Chuo-ku, Osaka 540-8585, Japan
    Search for more papers by this author
  • Takeshi Yamao,

    1. Department of Macromolecular Science and Engineering, Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan
    Search for more papers by this author
  • Shu Hotta

    Corresponding author
    1. Department of Macromolecular Science and Engineering, Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan
    • Department of Macromolecular Science and Engineering, Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan.
    Search for more papers by this author

Abstract

A novel device structure for organic light-emitting field-effect transistors has been developed. The devices comprise bilayer-crystal organic semiconductors of a p-type and an n-type. The pn-junction can readily be formed by successively laminating two crystals on top of a gate insulator. This structure enables the efficient injection and transport of electrons and holes, leading to their effective recombination. As a result, bright emissions are attained. The devices are operated by AC gate voltages. Gate-voltage phase-resolved drain-current and emission-intensity measurements enable us to study the relationship between the emissions and carrier transport. The maximum external quantum efficiency reaches 0.045%.

Ancillary