Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures

Authors

  • Byungjin Cho,

    1. School of Materials Science and Engineering, Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500–712, Korea
    Search for more papers by this author
  • Sunghun Song,

    1. School of Materials Science and Engineering, Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500–712, Korea
    Search for more papers by this author
  • Yongsung Ji,

    1. School of Materials Science and Engineering, Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500–712, Korea
    Search for more papers by this author
  • Tae-Wook Kim,

    1. Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Jeollabuk-do 565–902, Korea
    Search for more papers by this author
  • Takhee Lee

    Corresponding author
    1. School of Materials Science and Engineering, Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500–712, Korea
    • School of Materials Science and Engineering, Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500–712, Korea.
    Search for more papers by this author

Errata

This article is corrected by:

  1. Errata: Correction: Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures Volume 21, Issue 18, 3406, Article first published online: 20 September 2011

Abstract

In recent years, organic resistive memory devices in which active organic materials possess at least two stable resistance states have been extensively investigated for their promising memory potential. From the perspective of device fabrication, their advantages include simple device structures, low fabrication costs, and printability. Furthermore, their exceptional electrical performances such as a nondestructive reading process, nonvolatility, a high ON/OFF ratio, and a fast switching speed meet the requirements for viable memory technologies. Full understanding of the underlying physics behind the interesting phenomena is still challenging. However, many studies have provided useful insights into scientific and technical issues surrounding organic resistive memory. This Feature Article begins with a summary on general characteristics of the materials, device structures, and switching mechanisms used in organic resistive devices. Strategies for performance enhancement, integration, and advanced architectures in these devices are also presented, which may open a way toward practically applicable organic memory devices.

Ancillary