Feature Article

Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures

  1. Byungjin Cho1,
  2. Sunghun Song1,
  3. Yongsung Ji1,
  4. Tae-Wook Kim2,
  5. Takhee Lee1,*

Article first published online: 8 JUL 2011

DOI: 10.1002/adfm.201100686

Issue

Advanced Functional Materials

Advanced Functional Materials

Volume 21, Issue 15, pages 2806–2829, August 9, 2011

Additional Information

How to Cite

Cho, B., Song, S., Ji, Y., Kim, T.-W. and Lee, T. (2011), Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures. Adv. Funct. Mater., 21: 2806–2829. doi: 10.1002/adfm.201100686

Author Information

  1. 1

    School of Materials Science and Engineering, Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500–712, Korea

  2. 2

    Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Jeollabuk-do 565–902, Korea

*School of Materials Science and Engineering, Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500–712, Korea.

Publication History

  1. Issue published online: 4 AUG 2011
  2. Article first published online: 8 JUL 2011
  3. Manuscript Received: 29 MAR 2011
Corrected by:

Correction: Correction: Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures

Vol. 21, Issue 18, 3406, Article first published online: 20 SEP 2011

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Keywords:

  • organic electronics;
  • resistive memory;
  • electrical bistability;
  • switching mechanisms;
  • performance enhancement;
  • integration;
  • architectures

Abstract

In recent years, organic resistive memory devices in which active organic materials possess at least two stable resistance states have been extensively investigated for their promising memory potential. From the perspective of device fabrication, their advantages include simple device structures, low fabrication costs, and printability. Furthermore, their exceptional electrical performances such as a nondestructive reading process, nonvolatility, a high ON/OFF ratio, and a fast switching speed meet the requirements for viable memory technologies. Full understanding of the underlying physics behind the interesting phenomena is still challenging. However, many studies have provided useful insights into scientific and technical issues surrounding organic resistive memory. This Feature Article begins with a summary on general characteristics of the materials, device structures, and switching mechanisms used in organic resistive devices. Strategies for performance enhancement, integration, and advanced architectures in these devices are also presented, which may open a way toward practically applicable organic memory devices.

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