Enhancement Of Dielectric Permittivity And Electromechanical Response In Silicone Elastomers: Molecular Grafting Of Organic Dipoles To The Macromolecular Network

Authors

  • Björn Kussmaul,

    1. Fraunhofer Institute for Applied Polymer Research, Geiselbergstr. 69, 14476 Potsdam, Germany
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  • Sebastian Risse,

    1. University of Potsdam, Institute of Physics and Astronomy, Applied Condensed-Matter Physics, Karl-Liebknecht-Str. 24/25, 14476 Potsdam, Germany
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  • Guggi Kofod,

    Corresponding author
    1. University of Potsdam, Institute of Physics and Astronomy, Applied Condensed-Matter Physics, Karl-Liebknecht-Str. 24/25, 14476 Potsdam, Germany
    • University of Potsdam, Institute of Physics and Astronomy, Applied Condensed-Matter Physics, Karl-Liebknecht-Str. 24/25, 14476 Potsdam, Germany.
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  • Rémi Waché,

    1. University of Potsdam, Institute of Physics and Astronomy, Applied Condensed-Matter Physics, Karl-Liebknecht-Str. 24/25, 14476 Potsdam, Germany
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  • Michael Wegener,

    1. Fraunhofer Institute for Applied Polymer Research, Geiselbergstr. 69, 14476 Potsdam, Germany
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  • Denis N. McCarthy,

    1. University of Potsdam, Institute of Physics and Astronomy, Applied Condensed-Matter Physics, Karl-Liebknecht-Str. 24/25, 14476 Potsdam, Germany
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  • Hartmut Krüger,

    1. Fraunhofer Institute for Applied Polymer Research, Geiselbergstr. 69, 14476 Potsdam, Germany
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  • Reimund Gerhard

    1. University of Potsdam, Institute of Physics and Astronomy, Applied Condensed-Matter Physics, Karl-Liebknecht-Str. 24/25, 14476 Potsdam, Germany
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Abstract

A novel method is established for permittivity enhancement of a silicone matrix for dielectric elastomer actuators (DEAs) by molecular level modifications of the elastomer matrix. A push-pull dipole is synthesized to be compatible with the silicone crosslinking chemistry, allowing for direct grafting to the crosslinker molecules in a one-step film formation process. This method prevents agglomeration and yields elastomer films that are homogeneous down to the molecular level. The dipole-to-silicone network grafting reaction is studied by FTIR. The chemical, thermal, mechanical and electrical properties of films with dipole contents ranging from 0 wt% to 13.4 wt% were thoroughly characterized. The grafting of dipoles modifies the relative permittivity and the stiffness, resulting in the actuation strain at a given electrical field being improved by a factor of six.

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