Tristate Memory Using Ferroelectric–Insulator–Semiconductor Heterojunctions for 50% Increased Data Storage
Version of Record online: 13 SEP 2011
Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Advanced Functional Materials
Volume 21, Issue 22, pages 4305–4313, November 22, 2011
How to Cite
Park, M. H., Lee, H. J., Kim, G. H., Kim, Y. J., Kim, J. H., Lee, J. H. and Hwang, C. S. (2011), Tristate Memory Using Ferroelectric–Insulator–Semiconductor Heterojunctions for 50% Increased Data Storage. Adv. Funct. Mater., 21: 4305–4313. doi: 10.1002/adfm.201101073
- Issue online: 16 NOV 2011
- Version of Record online: 13 SEP 2011
- Manuscript Revised: 27 JUN 2011
- Manuscript Received: 13 MAY 2011
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