Digital-Inverter Amine Sensing via Synergistic Responses by n and p Organic Semiconductors

Authors

  • Noah J. Tremblay,

    1. Departments of Materials Science and Engineering and School of Public Health, Johns Hopkins University, 3400 North Charles Street, Baltimore, MD 21218, USA
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  • Byung Jun Jung,

    1. Departments of Materials Science and Engineering and School of Public Health, Johns Hopkins University, 3400 North Charles Street, Baltimore, MD 21218, USA
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  • Patrick Breysse,

    1. Departments of Materials Science and Engineering and School of Public Health, Johns Hopkins University, 3400 North Charles Street, Baltimore, MD 21218, USA
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  • Howard E. Katz

    Corresponding author
    1. Departments of Materials Science and Engineering and School of Public Health, Johns Hopkins University, 3400 North Charles Street, Baltimore, MD 21218, USA
    • Departments of Materials Science and Engineering and School of Public Health, Johns Hopkins University, 3400 North Charles Street, Baltimore, MD 21218, USA.
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Abstract

Chemiresistors and sensitive organic field-effect transistors (OFETs) have been substantially developed as cheap, scalable, and versatile sensing platforms. While new materials are expanding OFET sensing capabilities, the device architectures have changed little. Higher order logic circuits utilizing OFETs sensitive to amine vapors are presented. The circuits depend on the synergistic responses of paired p- and n-channel organic semiconductors, including a rare analyte-induced current increase by the n-channel semiconductor. This is the first step towards ‘intelligent sensors’ that utilize analog signal changes in sensitive OFETs to produce direct digital readouts suitable for further logic operations.

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