Full Paper
Sub-Picosecond Processes of Ferroelectric Domain Switching from Field and Temperature Experiments
Article first published online: 8 NOV 2011
DOI: 10.1002/adfm.201101521
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Jiang, A. Q., Lee, H. J., Hwang, C. S. and Scott, J. F. (2012), Sub-Picosecond Processes of Ferroelectric Domain Switching from Field and Temperature Experiments. Adv. Funct. Mater., 22: 192–199. doi: 10.1002/adfm.201101521
Publication History
- Issue published online: 2 JAN 2012
- Article first published online: 8 NOV 2011
- Manuscript Received: 6 JUL 2011
- Abstract
- Article
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Keywords:
- stimuli-responsive materials;
- ferroelectrics;
- thin films;
- switching currents;
- nucleation times
Abstract
After calculations of various domain-switching current transients under the pulse from electrical circuit parameters, the field dependence of domain-switching speeds is accurately estimated over five orders of magnitude in a wide temperature range of 5.4–280 K from the height of domain-switching current in Pb(Zr0.4Ti0.6)O3 thin films. These estimations are extended following Merz's equation [W. J. Merz, Phys. Rev.1954, 95, 690] and an ultimate domain-switching current density of 1.4 × 108 A cm−1 is extracted at the highest field of 0.20 MV cm−1. From classical domain-nucleation models with thermal fluctuations, an ultimate (asymptotic high-field) nucleation time of 0.47 ps is derived when the domain sideways motion is kink-nucleation-rate limited.

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