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Sub-Picosecond Processes of Ferroelectric Domain Switching from Field and Temperature Experiments

Authors

  • An Quan Jiang,

    Corresponding author
    1. State Key Laboratory of ASIC & System, Department of Microelectronics, Fudan University, Shanghai, 200433, China
    • An Quan Jiang, State Key Laboratory of ASIC & System, Department of Microelectronics, Fudan University, Shanghai, 200433, China

      Cheol Seong Hwang, Department of Materials Science and Engineering and Inter-university, Semiconductor Research Center, Seoul National University, Seoul, 151-744, S. Korea

      James F. Scott, Department of Physics, University of Cambridge, Cambridge CB3 0HE, United Kingdom.

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  • Hyun Ju Lee,

    1. Department of Materials Science and Engineering and Inter-university, Semiconductor Research Center, Seoul National University, Seoul, 151-744, S. Korea
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  • Cheol Seong Hwang,

    Corresponding author
    1. Department of Materials Science and Engineering and Inter-university, Semiconductor Research Center, Seoul National University, Seoul, 151-744, S. Korea
    • An Quan Jiang, State Key Laboratory of ASIC & System, Department of Microelectronics, Fudan University, Shanghai, 200433, China

      Cheol Seong Hwang, Department of Materials Science and Engineering and Inter-university, Semiconductor Research Center, Seoul National University, Seoul, 151-744, S. Korea

      James F. Scott, Department of Physics, University of Cambridge, Cambridge CB3 0HE, United Kingdom.

    Search for more papers by this author
  • James F. Scott

    Corresponding author
    1. Department of Physics, University of Cambridge, Cambridge CB3 0HE, United Kingdom
    • An Quan Jiang, State Key Laboratory of ASIC & System, Department of Microelectronics, Fudan University, Shanghai, 200433, China

      Cheol Seong Hwang, Department of Materials Science and Engineering and Inter-university, Semiconductor Research Center, Seoul National University, Seoul, 151-744, S. Korea

      James F. Scott, Department of Physics, University of Cambridge, Cambridge CB3 0HE, United Kingdom.

    Search for more papers by this author

Abstract

After calculations of various domain-switching current transients under the pulse from electrical circuit parameters, the field dependence of domain-switching speeds is accurately estimated over five orders of magnitude in a wide temperature range of 5.4–280 K from the height of domain-switching current in Pb(Zr0.4Ti0.6)O3 thin films. These estimations are extended following Merz's equation [W. J. Merz, Phys. Rev. 1954, 95, 690] and an ultimate domain-switching current density of 1.4 × 108 A cm−1 is extracted at the highest field of 0.20 MV cm−1. From classical domain-nucleation models with thermal fluctuations, an ultimate (asymptotic high-field) nucleation time of 0.47 ps is derived when the domain sideways motion is kink-nucleation-rate limited.

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