A novel approach to enhancing the emission efficiency of InGaN/GaN multiple quantum wells via coupling to surface plasmons (SPs) in a periodic two-dimensional silver array is demonstrated. A higher internal quantum efficiency and a higher light extraction efficiency are simultaneously achieved by engraving an array of nanoholes into the p-GaN cladding layer, followed by partial filling with silver. By top excitation and collection from the top of the Ag-incorporated light emitting diodes (LEDs), a 2.8-fold enhancement in peak photoluminescence intensity is demonstrated. The proposed nanoengraving technique offers a practical approach to overcoming the limitation of the exponentially decayed SP field without sacrificing the thickness of the p-GaN layer and to controlling the effective coupling energy. The approach is feasible for high-power lighting applications.
If you can't find a tool you're looking for, please click the link at the top of the page to "Go to old article view". Alternatively, view our Knowledge Base articles for additional help. Your feedback is important to us, so please let us know if you have comments or ideas for improvement.