Full Paper

Reversible Switch Memory Effect in Hydrogen-Terminated Ultrananocrystalline Diamond

  1. Moshe Tordjman1,*,
  2. Asaf Bolker1,
  3. Cecile Saguy1,
  4. Emanuel Baskin1,
  5. Paola Bruno2,
  6. Dieter M. Gruen2,
  7. Rafi Kalish1,*

Article first published online: 10 FEB 2012

DOI: 10.1002/adfm.201102193

Issue

Advanced Functional Materials

Advanced Functional Materials

Volume 22, Issue 9, pages 1827–1834, May 9, 2012

Additional Information

How to Cite

Tordjman, M., Bolker, A., Saguy, C., Baskin, E., Bruno, P., Gruen, D. M. and Kalish, R. (2012), Reversible Switch Memory Effect in Hydrogen-Terminated Ultrananocrystalline Diamond. Adv. Funct. Mater., 22: 1827–1834. doi: 10.1002/adfm.201102193

Author Information

  1. 1

    Russell Berrie Nanotechnology Institute, Physics Department and Solid State Institute, Technion–Israel Institute of Technology, Technion City, 32000 Haifa, Israel

  2. 2

    Materials Science Division, Argonne National Lab, Argonne, 60439 IL, USA

*Russell Berrie Nanotechnology Institute, Physics Department and Solid State Institute, Technion–Israel Institute of Technology, Technion City, 32000 Haifa, Israel.

Publication History

  1. Issue published online: 2 MAY 2012
  2. Article first published online: 10 FEB 2012
  3. Manuscript Revised: 23 NOV 2011
  4. Manuscript Received: 15 SEP 2011

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Keywords:

  • composite materials;
  • ultrananocrystalline diamond;
  • electron field-emission;
  • electrical hysteresis;
  • transport mechanisms

Abstract

Innovative memory switch devices require reliable bistable conductance properties. It would be desirable if such bistable characteristics were available in robust solid state materials, such as diamond, which benefit from outstanding physical properties. A bistable current with reversible switching effect from surface transfer doped ultrananocrystalline diamond thin films measured by electron field emission is reported. This switching is manifested by the appearance of huge jumps in the current emission, up to four orders of magnitude, that occur at specific extracting electric field values. Persistent hysteresis is exhibited whenever the field is ramped down. It is proposed that these phenomena are the result of resonant-tunneling through a double barrier junction composed of tetrahedral amorphous carbon (ta-C)/nanodiamond/adsorbent/vacuum. This finding may pave the way for the realization of novel types of memory switch devices with unprecedented performance.

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