Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOx and Hetero TiOx/TiON/TiOx Triple Multilayer Frameworks

Authors

  • Yoon Cheol Bae,

    1. Division of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, 133-791, South Korea
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  • Ah Rahm Lee,

    1. Division of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, 133-791, South Korea
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  • Ja Bin Lee,

    1. The Research Institute for Natural Sciences, Novel Founctional Materials and Devices Lab., Department of Physics, Hanyang University, Seoul, 133-791, South Korea
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  • Ja Hyun Koo,

    1. The Research Institute for Natural Sciences, Novel Founctional Materials and Devices Lab., Department of Physics, Hanyang University, Seoul, 133-791, South Korea
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  • Kyung Cheol Kwon,

    1. Division of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, 133-791, South Korea
    2. National Program Center for Tera-bit-level, Nonvolatile Memory Development, Hanyang University, Seoul 133-791, South Korea
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  • Jea Gun Park,

    1. National Program Center for Tera-bit-level, Nonvolatile Memory Development, Hanyang University, Seoul 133-791, South Korea
    2. Department of Electronic Engineering, Hanyang University, Seoul 133-791, South Korea
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  • Hyun Sik Im,

    1. Department of Semiconductor Science, Dongguk University, Seoul 100-715, South Korea
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  • Jin Pyo Hong

    Corresponding author
    1. Division of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, 133-791, South Korea
    2. The Research Institute for Natural Sciences, Novel Founctional Materials and Devices Lab., Department of Physics, Hanyang University, Seoul, 133-791, South Korea
    • Division of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, 133-791, South Korea.

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Abstract

Developing a means by which to compete with commonly used Si-based memory devices represents an important challenge for the realization of future three-dimensionally stacked crossbar-array memory devices with multifunctionality. Therefore, oxide-based resistance switching memory (ReRAM), with its associated phenomena of oxygen ion drifts under a bias, is becoming increasingly important for use in nanoscalable crossbar arrays with an ideal memory cell size due to its simple metal–insulator–metal structure and low switching current of 10–100 μA. However, in a crossbar array geometry, one single memory element defined by the cross-point of word and bit lines is highly susceptible to unintended leakage current due to parasitic paths around neighboring cells when no selective devices such as diodes or transistors are used. Therefore, the effective complementary resistive switching (CRS) features in all Ti-oxide-based triple layered homo Pt/TiOx/TiOy/TiOx/Pt and hetero Pt/TiOx/TiON/TiOx/Pt geometries as alternative resistive switching matrices are reported. The possible resistive switching nature of the novel triple matrices is also discussed together with their electrical and structural properties. The ability to eliminate both an external resistor for efficient CRS operation and a metallic Pt middle electrode for further cost-effective scalability will accelerate progress toward the realization of cross-bar ReRAM in this framework.

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