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Conductivity of SU-8 Thin Films through Atomic Force Microscopy Nano-Patterning

Authors

  • Cristina Martin-Olmos,

    1. Institut de Microelectrònica de Barcelona (CNM-IMB-CSIC), Campus de la Universitat Autònoma de Barcelona, E-08193 Bellaterra, Spain
    2. Laboratory of Microsystems, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
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  • L. Guillermo Villanueva,

    1. Laboratory of Microsystems, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
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  • Peter D. van der Wal,

    1. Sensors, Actuators and Microsystems Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), CH-2002 Neuchâtel, Switzerland
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  • Andreu Llobera,

    1. Institut de Microelectrònica de Barcelona (CNM-IMB-CSIC), Campus de la Universitat Autònoma de Barcelona, E-08193 Bellaterra, Spain
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  • Nico F. de Rooij,

    1. Sensors, Actuators and Microsystems Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), CH-2002 Neuchâtel, Switzerland
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  • Jürgen Brugger,

    1. Laboratory of Microsystems, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
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  • Francesc Perez-Murano

    Corresponding author
    1. Institut de Microelectrònica de Barcelona (CNM-IMB-CSIC), Campus de la Universitat Autònoma de Barcelona, E-08193 Bellaterra, Spain
    • Institut de Microelectrònica de Barcelona (CNM-IMB-CSIC), Campus de la Universitat Autònoma de Barcelona, E-08193 Bellaterra, Spain.
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Abstract

Processing flexibility and good mechanical properties are the two major reasons for SU-8 extensive applicability in the micro-fabrication of devices. In order to expand its usability down to the nanoscale, conductivity of ultra-thin SU-8 layers as well as its patterning by AFM are explored. By performing local electrical measurements outstanding insulating properties and a dielectric strength 100 times larger than that of SiO2 are shown. It is also demonstrated that the resist can be nano-patterned using AFM, obtaining minimum dimensions below 40nm and that it can be combined with parallel lithographic methods like UV-lithography. The concurrence of excellent insulating properties and nanometer-scale patternability enables a valuable new approach for the fabrication of nanodevices. As a proof of principle, nano-electrode arrays for electrochemical measurements which show radial diffusion and no overlap between different diffusion layers are fabricated. This indicates the potential of the developed technique for the nanofabrication of devices.

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