Sources of Hysteresis in Carbon Nanotube Field-Effect Transistors and Their Elimination Via Methylsiloxane Encapsulants and Optimized Growth Procedures
Version of Record online: 15 MAR 2012
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Advanced Functional Materials
Volume 22, Issue 11, pages 2276–2284, June 6, 2012
How to Cite
Jin, S. H., Islam, A. E., Kim, T.-i., Kim, J.-h., Alam, M. A. and Rogers, J. A. (2012), Sources of Hysteresis in Carbon Nanotube Field-Effect Transistors and Their Elimination Via Methylsiloxane Encapsulants and Optimized Growth Procedures. Adv. Funct. Mater., 22: 2276–2284. doi: 10.1002/adfm.201102814
- Issue online: 4 JUN 2012
- Version of Record online: 15 MAR 2012
- Manuscript Revised: 9 JAN 2012
- Manuscript Received: 21 NOV 2011
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