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Co-Implantation of Carbon and Protons: An Integrated Silicon Device Technology Compatible Method to Generate the Lasing G-Center

Authors

  • Dilla D. Berhanuddin,

    1. Advanced Technology Institute, Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, Surrey GU2 7XH, UK
    2. Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, Bangi, 43000 Selangor, Malaysia
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  • Manon A. Lourenço,

    Corresponding author
    1. Advanced Technology Institute, Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, Surrey GU2 7XH, UK
    • Advanced Technology Institute, Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, Surrey GU2 7XH, UK.
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  • Russell M. Gwilliam,

    1. Advanced Technology Institute, Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, Surrey GU2 7XH, UK
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  • Kevin P. Homewood

    1. Advanced Technology Institute, Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, Surrey GU2 7XH, UK
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Abstract

The optically active carbon related G-center is attracting great interest because of evidence that it can provide lasing in silicon. Here a technique to form the G-center in silicon is reported. The carbon G-center is generated by implantation of carbon followed by proton irradiation. Photoluminescence measurements confirm the controlled formation of high levels of the G-center that, importantly, completely dominates the emission spectrum. Unlike previous methods of introducing the G-center the current approach significantly is truly fully compatible with standard silicon ULSI (ultralarge scale integration) technology.

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