Electronic Devices on Various Substrates: Fabrication of Releasable Single-Crystal Silicon–Metal Oxide Field-Effect Devices and Their Deterministic Assembly on Foreign Substrates (Adv. Funct. Mater. 16/2011)

Authors

  • Hyun-Joong Chung,

    1. Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
    Current affiliation:
    1. H.-J.C and T.-i.K. contributed equally to this work.
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  • Tae-il Kim,

    1. Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
    Current affiliation:
    1. H.-J.C and T.-i.K. contributed equally to this work.
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  • Hoon-Sik Kim,

    1. Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
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  • Spencer A. Wells,

    1. Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
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  • Sungjin Jo,

    1. Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
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  • Numair Ahmed,

    1. Department of Mechanical Science and Engineering, Center for Nanoscale Chemical-Electrical-Mechanical, Manufacturing Systems, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
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  • Yei Hwan Jung,

    1. Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
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  • Sang Min Won,

    1. Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
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  • Christopher A. Bower,

    1. Semprius Inc., 4915 Prospectus Dr., Suite C, Durham, NC 27713, USA
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  • John A. Rogers

    Corresponding author
    1. Department of Materials Science and Engineering, Chemistry, Science and Engineering, Electrical, and Computer Engineering, Beckman Institute for Advanced Science and Technology, and Frederick, Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
    • Department of Materials Science and Engineering, Chemistry, Science and Engineering, Electrical, and Computer Engineering, Beckman Institute for Advanced Science and Technology, and Frederick, Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA.
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Abstract

original image

High-quality, fully formed silicon electronic devices that can be fabricated onto nearly any surface are presented by John A. Rogers and co-workers on page 3029. The cover shows a false-colored scanning electron microscopy image of an array of metal oxide semiconductor field-effect transistors that are fully formed on a silicon wafer. Potential applications range from large-area backplanes for display systems to stretchable components for advanced surgical devices. (Cover design: J. Sinn-Hanlon, University of Illinois)

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