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Solar Cells: Structural and Electronic Properties of Semiconductor-Sensitized Solar-Cell Interfaces (Adv. Funct. Mater. 24/2011)

  1. Christopher E. Patrick,
  2. Feliciano Giustino*

Article first published online: 13 DEC 2011

DOI: 10.1002/adfm.201190117

Issue

Advanced Functional Materials

Advanced Functional Materials

Volume 21, Issue 24, page 4798, December 20, 2011

Additional Information

How to Cite

Patrick, C. E. and Giustino, F. (2011), Solar Cells: Structural and Electronic Properties of Semiconductor-Sensitized Solar-Cell Interfaces (Adv. Funct. Mater. 24/2011). Adv. Funct. Mater., 21: 4798. doi: 10.1002/adfm.201190117

Author Information

  1. Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK

*Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK.

Publication History

  1. Issue published online: 13 DEC 2011
  2. Article first published online: 13 DEC 2011

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Keywords:

  • solar cells;
  • quantum dots;
  • electronic structure;
  • titanium dioxide;
  • Sb2S3
Thumbnail image of graphical abstract

On page 4663, Christopher E. Patrick and Feliciano Giustino investigate the interface between TiO2 and Sb2S3 found in semiconductor-sensitized solar cells by means of first principle calculations. An atomistic model of the TiO2 and Sb2S3 interface is proposed and the interfacial energy-level alignment and ideal open-circuit voltage are determined. The analysis of other isostructural sensitizers indicates that anti-monselite (Sb2Se3) holds potential for delivering higher energy conversion efficiencies than the TiO2/Sb2S3 system.

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