High-Performance Top-Gated Organic Field-Effect Transistor Memory using Electrets for Monolithic Printed Flexible NAND Flash Memory

Authors

  • Kang-Jun Baeg,

    Corresponding author
    1. Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeongno, Yuseong-gu, Daejeon 305-700, Republic of Korea
    Current affiliation:
    1. Department of Chemistry, Northwestern University 2145 Sheridan Road, Evanston, IL 60208, USA
    • Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeongno, Yuseong-gu, Daejeon 305-700, Republic of Korea
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  • Dongyoon Khim,

    1. Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea
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  • Juhwan Kim,

    1. Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea
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  • Byung-Do Yang,

    1. College of Electrical and Computer Engineering, Department of Electronics Engineering, Chungbuk National University, 410 Seongbong-ro, Heungduk-gu, Cheongju, Chungbuk, 361-76, Republic of Korea
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  • Minji Kang,

    1. Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea
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  • Soon-Won Jung,

    1. Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeongno, Yuseong-gu, Daejeon 305-700, Republic of Korea
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  • In-Kyu You,

    1. Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeongno, Yuseong-gu, Daejeon 305-700, Republic of Korea
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  • Dong-Yu Kim,

    1. Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea
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  • Yong-Young Noh

    Corresponding author
    1. Department of Chemical Engineering, Hanbat National University, San 16-1, Dukmyung-dong, Yuseong-gu, Daejeon 305-719, Republic of Korea
    • Department of Chemical Engineering, Hanbat National University, San 16-1, Dukmyung-dong, Yuseong-gu, Daejeon 305-719, Republic of Korea.
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Abstract

High-performance top-gated organic field-effect transistor (OFET) memory devices using electrets and their applications to flexible printed organic NAND flash are reported. The OFETs based on an inkjet-printed p-type polymer semiconductor with efficiently chargeable dielectric poly(2-vinylnaphthalene) (PVN) and high-k blocking gate dielectric poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) shows excellent non-volatile memory characteristics. The superior memory characteristics originate mainly from reversible charge trapping and detrapping in the PVN electret layer efficiently in low-k/high-k bilayered dielectrics. A strategy is devised for the successful development of monolithically inkjet-printed flexible organic NAND flash memory through the proper selection of the polymer electrets (PVN or PS), where PVN/- and PS/P(VDF-TrFE) devices are used as non-volatile memory cells and ground- and bit-line select transistors, respectively. Electrical simulations reveal that the flexible printed organic NAND flash can be possible to program, read, and erase all memory cells in the memory array repeatedly without affecting the non-selected memory cells.

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