Organozinc Compounds as Effective Dielectric Modification Layers for Polymer Field-Effect Transistors

Authors

  • Xinjun Xu,

    1. State Key Lab for Advanced Metal and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, P. R. China
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  • Bo Liu,

    1. College of Chemistry and Chemical Engineering, Central South University, Changsha 410083, P. R. China
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  • Yingping Zou,

    1. College of Chemistry and Chemical Engineering, Central South University, Changsha 410083, P. R. China
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  • Yunlong Guo,

    1. National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Lidong Li,

    Corresponding author
    1. State Key Lab for Advanced Metal and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, P. R. China
    • State Key Lab for Advanced Metal and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, P. R. China
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  • Yunqi Liu

    Corresponding author
    1. National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
    • National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China.
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Abstract

The interface between the organic semiconductor and dielectric plays an important role in determining the device performance of organic field-effect transistors (OFETs). Although self-assembled monolayers (SAMs) made from organosilanes have been widely used for dielectric modification to improve the device performance of OFETs, they suffer from incontinuous and lack uniform coverage of the dielectric layer. Here, it is reported that by introduction of a solution-processed organozinc compound as a dielectric modification layer between the dielectric and the silane SAM, improved surface morphology and reduced surface polarity can be achieved. The organozinc compound originates from the reaction between diethylzinc and the cyclohexanone solvent, which leads to formation of zinc carboxylates. Being annealed at different temperatures, organozinc compound exists in various forms in the solid films. With organozinc modification, p-type polymer FETs show a high charge carrier mobility that is about two-fold larger than a control device that does not contain the organozinc compound, both for devices with a positive threshold voltage and for those with a negative one. After organozinc compound modification, the threshold voltage of polymer FETs can either be altered to approach zero or remain unchanged depending on positive or negative threshold voltage they have.

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