Layer-Controlled and Wafer-Scale Synthesis of Uniform and High-Quality Graphene Films on a Polycrystalline Nickel Catalyst

Authors

  • Youpin Gong,

    1. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou, Jiangsu 215123, P. R. China
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  • Xuemin Zhang,

    1. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou, Jiangsu 215123, P. R. China
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  • Guangtong Liu,

    1. Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Liqiong Wu,

    1. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou, Jiangsu 215123, P. R. China
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  • Xiumei Geng,

    1. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou, Jiangsu 215123, P. R. China
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  • Mingsheng Long,

    1. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou, Jiangsu 215123, P. R. China
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  • Xiaohui Cao,

    1. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou, Jiangsu 215123, P. R. China
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  • Yufen Guo,

    1. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou, Jiangsu 215123, P. R. China
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  • Weiwei Li,

    1. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou, Jiangsu 215123, P. R. China
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  • Jianbao Xu,

    1. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou, Jiangsu 215123, P. R. China
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  • Mengtao Sun,

    1. Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Li Lu,

    1. Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Liwei Liu

    Corresponding author
    1. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou, Jiangsu 215123, P. R. China
    • Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou, Jiangsu 215123, P. R. China.
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Abstract

Chemical vapor deposition (CVD) provides a synthesis route for large-area and high-quality graphene films. However, layer-controlled synthesis remains a great challenge on polycrystalline metallic films. Here, a facile and viable synthesis of layer-controlled and high-quality graphene films on wafer-scale Ni surface by the sequentially separated steps of gas carburization, hydrogen exposure, and segregation is developed. The layer numbers of graphene films with large domain sizes are controlled precisely at ambient pressure by modulating the simplified CVD process conditions and hydrogen exposure. The hydrogen exposure assisted with a Ni catalyst plays a critical role in promoting the preferential segregation through removing the carbon layers on the Ni surface and reducing carbon content in the Ni. Excellent electrical and transparent conductive performance, with a room-temperature mobility of ≈3000 cm2 V−1 s−1 and a sheet resistance as low as ≈100 Ω per square at ≈90% transmittance, of the twisted few-layer grapheme films grown on the Ni catalyst is demonstrated.

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