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Keywords:

  • spintronics;
  • magnetic tunnel junctions;
  • oxide thin films;
  • magnetic coupling;
  • epitaxy

Abstract

A high-performance spin filter tunnel junction composed of an epitaxial oxide heterostructure is reported. By independently controlling the magnetic orientations of ferromagnetic tunnel barrier and electrode layers, a tunnel magnetoresistance ratio exceeding 120% is obtained purely by the spin filtering effect. A newly introduced spin filter material, Pr0.8Ca0.2Mn1-yCoyO3, is shown to be useful for building novel multibarrier spintronic tunnel devices due to its composition-controlled magnetic hardness.