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Large Tunnel Magnetoresistance in Epitaxial Oxide Spin-Filter Tunnel Junctions

Authors

  • Takayuki Harada,

    1. Department of Applied Chemistry, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
    Current affiliation:
    1. Institute for Solid State Physics, The University of Tokyo, 5-1-5, Kashiwanoha, Kashiwa, Chiba, 277-8581, Japan
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  • Isao Ohkubo,

    Corresponding author
    1. Department of Applied Chemistry, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
    Current affiliation:
    1. National Institute for Materials Science, 1-1 Namiki Tsukuba-shi, Ibaraki 305-0044, Japan; OHKUBO.Isao@nims.go.jp
    • Department of Applied Chemistry, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan.
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  • Mikk Lippmaa,

    1. Institute for Solid State Physics, The University of Tokyo, 5-1-5, Kashiwanoha, Kashiwa, Chiba, 277-8581, Japan
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  • Yasuaki Sakurai,

    1. Department of Applied Chemistry, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
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  • Yuji Matsumoto,

    1. Materials and Structures Laboratory, Tokyo Institute of Technology, 4259, Midori-ku Nagatsuta, Yokohama, 226-8503, Japan
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  • Shunsuke Muto,

    1. Department of Materials, Physics, and Energy Engineering, Graduate School of Engineering Nagoya University, Nagoya, 464-8603, Japan
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  • Hideomi Koinuma,

    1. Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5, Kashiwanoha, Kashiwa, Chiba, 277-8568, Japan
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  • Masaharu Oshima

    1. Department of Applied Chemistry, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
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Abstract

A high-performance spin filter tunnel junction composed of an epitaxial oxide heterostructure is reported. By independently controlling the magnetic orientations of ferromagnetic tunnel barrier and electrode layers, a tunnel magnetoresistance ratio exceeding 120% is obtained purely by the spin filtering effect. A newly introduced spin filter material, Pr0.8Ca0.2Mn1-yCoyO3, is shown to be useful for building novel multibarrier spintronic tunnel devices due to its composition-controlled magnetic hardness.

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