Bias-Stress-Induced Charge Trapping at Polymer Chain Ends of Polymer Gate-Dielectrics in Organic Transistors
Version of Record online: 9 JUL 2012
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Advanced Functional Materials
Volume 22, Issue 22, pages 4833–4839, November 21, 2012
How to Cite
Choi, H. H., Lee, W. H. and Cho, K. (2012), Bias-Stress-Induced Charge Trapping at Polymer Chain Ends of Polymer Gate-Dielectrics in Organic Transistors. Adv. Funct. Mater., 22: 4833–4839. doi: 10.1002/adfm.201201084
- Issue online: 9 NOV 2012
- Version of Record online: 9 JUL 2012
- Manuscript Received: 18 APR 2012
Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors.
Please note: Wiley Blackwell is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.