Get access

Optimal Structure for High-Performance and Low-Contact-Resistance Organic Field-Effect Transistors Using Contact-Doped Coplanar and Pseudo-Staggered Device Architectures

Authors

  • Peter Darmawan,

    Corresponding author
    1. International Center for Materials, Nanoarchitectronics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
    • International Center for Materials, Nanoarchitectronics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan.
    Search for more papers by this author
  • Takeo Minari,

    Corresponding author
    1. International Center for Materials, Nanoarchitectronics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
    2. RIKEN, Wako, Saitama 351-0198, Japan
    • International Center for Materials, Nanoarchitectronics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan.
    Search for more papers by this author
  • Yong Xu,

    1. International Center for Materials, Nanoarchitectronics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
    Search for more papers by this author
  • Song-Lin Li,

    1. International Center for Materials, Nanoarchitectronics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
    Search for more papers by this author
  • Haisheng Song,

    1. International Center for Materials, Nanoarchitectronics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
    Search for more papers by this author
  • Meiyin Chan,

    1. International Center for Materials, Nanoarchitectronics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
    Search for more papers by this author
  • Kazuhito Tsukagoshi

    Corresponding author
    1. International Center for Materials, Nanoarchitectronics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
    2. Core Research for Evolutional Science & Technology (CREST), Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012, Japan
    • International Center for Materials, Nanoarchitectronics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan.
    Search for more papers by this author

Abstract

A low contact resistance achieved on top-gated organic field-effect transistors by using coplanar and pseudo-staggered device architectures, as well as the introduction of a dopant layer, is reported. The top-gated structure effectively minimizes the access resistance from the contact to the channel region and the charge-injection barrier is suppressed by doping of iron(III)trichloride at the metal/organic semiconductor interface. Compared with conventional bottom-gated staggered devices, a remarkably low contact resistance of 0.1–0.2 kΩ cm is extracted from the top-gated devices by the modified transfer line method. The top-gated devices using thienoacene compound as a semiconductor exhibit a high average field-effect mobility of 5.5–5.7 cm2 V−1 s−1 and an acceptable subthreshold swing of 0.23–0.24 V dec−1 without degradation in the on/off ratio of ≈109. Based on these experimental achievements, an optimal device structure for a high-performance organic transistor is proposed.

Get access to the full text of this article

Ancillary