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Optimal Structure for High-Performance and Low-Contact-Resistance Organic Field-Effect Transistors Using Contact-Doped Coplanar and Pseudo-Staggered Device Architectures

  1. Peter Darmawan1,*,
  2. Takeo Minari1,2,*,
  3. Yong Xu1,
  4. Song-Lin Li1,
  5. Haisheng Song1,
  6. Meiyin Chan1,
  7. Kazuhito Tsukagoshi1,3,*

Article first published online: 21 JUN 2012

DOI: 10.1002/adfm.201201094

Issue

Advanced Functional Materials

Advanced Functional Materials

Volume 22, Issue 21, pages 4577–4583, November 7, 2012

Additional Information

How to Cite

Darmawan, P., Minari, T., Xu, Y., Li, S.-L., Song, H., Chan, M. and Tsukagoshi, K. (2012), Optimal Structure for High-Performance and Low-Contact-Resistance Organic Field-Effect Transistors Using Contact-Doped Coplanar and Pseudo-Staggered Device Architectures. Adv. Funct. Mater., 22: 4577–4583. doi: 10.1002/adfm.201201094

Author Information

  1. 1

    International Center for Materials, Nanoarchitectronics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan

  2. 2

    RIKEN, Wako, Saitama 351-0198, Japan

  3. 3

    Core Research for Evolutional Science & Technology (CREST), Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012, Japan

*International Center for Materials, Nanoarchitectronics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan.

Publication History

  1. Issue published online: 2 NOV 2012
  2. Article first published online: 21 JUN 2012
  3. Manuscript Revised: 23 MAY 2012
  4. Manuscript Received: 19 APR 2012

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