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Full Paper

Control of Current Hysteresis of Networked Single-Walled Carbon Nanotube Transistors by a Ferroelectric Polymer Gate Insulator

  1. Yeon Sik Choi1,
  2. Jinwoo Sung1,
  3. Seok Ju Kang1,
  4. Sung Hwan Cho1,
  5. Ihn Hwang1,
  6. Sun Kak Hwang1,
  7. June Huh1,
  8. Ho-Cheol Kim2,
  9. Siegfried Bauer3,
  10. Cheolmin Park1,*

Article first published online: 9 OCT 2012

DOI: 10.1002/adfm.201201170

Issue

Advanced Functional Materials

Advanced Functional Materials

Volume 23, Issue 9, pages 1120–1128, March 6, 2013

Additional Information

How to Cite

Choi, Y. S., Sung, J., Kang, S. J., Cho, S. H., Hwang, I., Hwang, S. K., Huh, J., Kim, H.-C., Bauer, S. and Park, C. (2013), Control of Current Hysteresis of Networked Single-Walled Carbon Nanotube Transistors by a Ferroelectric Polymer Gate Insulator. Adv. Funct. Mater., 23: 1120–1128. doi: 10.1002/adfm.201201170

Author Information

  1. 1

    Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea

  2. 2

    IBM Almaden Research Center 650 Harry Road, San Jose, CA 95120, USA

  3. 3

    Soft Matter Physics, Johannes Kepler University, Altenberger Strasse 69, 4040 Linz, Austria

*Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea.

Publication History

  1. Issue published online: 4 MAR 2013
  2. Article first published online: 9 OCT 2012
  3. Manuscript Revised: 1 SEP 2012
  4. Manuscript Received: 27 APR 2012

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