SEARCH

SEARCH BY CITATION

Cited in:

CrossRef

This article has been cited by:

  1. 1
    Takeaki Yajima, Makoto Minohara, Christopher Bell, Hiroshi Kumigashira, Masaharu Oshima, Harold Y. Hwang, Yasuyuki Hikita, Enhanced Electrical Transparency by Ultrathin LaAlO3Insertion at Oxide Metal/Semiconductor Heterointerfaces, Nano Letters, 2015, 150205091124006

    CrossRef

  2. 2
    Tadej Rojac, Andreja Bencan, Barbara Malic, Goknur Tutuncu, Jacob L. Jones, John E. Daniels, Dragan Damjanovic, BiFeO3 Ceramics: Processing, Electrical, and Electromechanical Properties, Journal of the American Ceramic Society, 2014, 97, 7
  3. 3
    D Sando, A Barthélémy, M Bibes, BiFeO3epitaxial thin films and devices: past, present and future, Journal of Physics: Condensed Matter, 2014, 26, 47, 473201

    CrossRef

  4. 4
    Jingyi Chen, Yao Wang, Yuan Deng, Combined effects of Bi deficiency and Mn substitution on the structural transformation and functionality of BiFeO3 films, Journal of Applied Physics, 2014, 116, 17, 174102

    CrossRef

  5. 5
    Rui-Peng Yang, Si-Xian Lin, Xiao-Gong Fang, Ming-Hui Qin, Xing-Sen Gao, Min Zeng, Jun-Ming Liu, Electronic and magnetic properties of BiFeO3with intrinsic defects: First-principles prediction, Chinese Physics B, 2014, 23, 6, 067102

    CrossRef

  6. 6
    E. Miranda, D. Jiménez, A. Tsurumaki-Fukuchi, J. Blasco, H. Yamada, J. Suñé, A. Sawa, Modeling of hysteretic Schottky diode-like conduction in Pt/BiFeO3/SrRuO3 switches, Applied Physics Letters, 2014, 105, 8, 082904

    CrossRef

  7. 7
    Atsushi Tsurumaki-Fukuchi, Hiroyuki Yamada, Akihito Sawa, Resistive switching characteristics in dielectric/ferroelectric composite devices improved by post-thermal annealing at relatively low temperature, Applied Physics Letters, 2014, 104, 9, 092903

    CrossRef

  8. 8
    Z. B. Yan, J. -M. Liu, Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures, Scientific Reports, 2013, 3,

    CrossRef

  9. 9
    David Jiménez, Enrique Miranda, Atsushi Tsurumaki-Fukuchi, Hiroyuki Yamada, Jordi Suñé, Akihito Sawa, Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories, Applied Physics Letters, 2013, 103, 26, 263502

    CrossRef

  10. 10
    Xiaohui Liu, Yong Wang, J. D. Burton, Evgeny Y. Tsymbal, Polarization-controlled Ohmic to Schottky transition at a metal/ferroelectric interface, Physical Review B, 2013, 88, 16

    CrossRef

  11. 11
    Atsushi Tsurumaki-Fukuchi, Hiroyuki Yamada, Akihito Sawa, Resistive switching artificially induced in a dielectric/ferroelectric composite diode, Applied Physics Letters, 2013, 103, 15, 152903

    CrossRef

  12. 12
    Zhihui Chen, Long He, Fan Zhang, Jun Jiang, Jianwei Meng, Boyuan Zhao, Anquan Jiang, The conduction mechanism of large on/off ferroelectric diode currents in epitaxial (111) BiFeO3 thin film, Journal of Applied Physics, 2013, 113, 18, 184106

    CrossRef