High Hole Mobility and Thickness-Dependent Crystal Structure in α,ω-Dihexylsexithiophene Single-Monolayer Field-Effect Transistors
Version of Record online: 14 SEP 2012
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Advanced Functional Materials
Volume 23, Issue 5, pages 554–564, February 5, 2013
How to Cite
Mannebach, E. M., Spalenka, J. W., Johnson, P. S., Cai, Z., Himpsel, F. J. and Evans, P. G. (2013), High Hole Mobility and Thickness-Dependent Crystal Structure in α,ω-Dihexylsexithiophene Single-Monolayer Field-Effect Transistors. Adv. Funct. Mater., 23: 554–564. doi: 10.1002/adfm.201201548
- Issue online: 1 FEB 2013
- Version of Record online: 14 SEP 2012
- Manuscript Revised: 8 AUG 2012
- Manuscript Received: 9 JUN 2012
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