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Improving Spin-Transport by Disorder

Authors

  • Stanislav Chadov,

    Corresponding author
    1. Max-Planck-Institut für Chemische, Physik fester Stoffe, Nöthnitzer Str. 40, 01187 Dresden, Germany
    2. Institut für Anorganische Chemie und Analytische Chemie, Johannes Gutenberg-Universität, 55099 Mainz, Germany
    • Max-Planck-Institut für Chemische, Physik fester Stoffe, Nöthnitzer Str. 40, 01187 Dresden, Germany.
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  • Janos Kiss,

    1. Max-Planck-Institut für Chemische, Physik fester Stoffe, Nöthnitzer Str. 40, 01187 Dresden, Germany
    2. Institut für Anorganische Chemie und Analytische Chemie, Johannes Gutenberg-Universität, 55099 Mainz, Germany
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  • Claudia Felser

    1. Max-Planck-Institut für Chemische, Physik fester Stoffe, Nöthnitzer Str. 40, 01187 Dresden, Germany
    2. Institut für Anorganische Chemie und Analytische Chemie, Johannes Gutenberg-Universität, 55099 Mainz, Germany
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Abstract

A new scheme dedicated to improving spin-transport characteristics by applying random disorder as a constructive agent is reported. The approach paves the way for the construction of novel systems with a surprising combination of properties, which are either extremely rare or even entirely absent within the known classes of ordered materials: half-metals with no net magnetization and magnetic semiconductors. As a real case example for the applicability of the scheme, it is shown that a series of such materials can be derived from the tetragonal Heusler compound Mn3Ga by substituting Mn with a 3d-transition metal.

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