Get access

High-Performance n-Channel Thin-Film Field-Effect Transistors Based on a Nanowire-Forming Polymer

Authors

  • Suk Gyu Hahm,

    1. School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, GA 30332-0400, USA
    2. Department of Chemistry, Division of Advanced Materials Science, Pohang Accelerator Laboratory, Center for Electro-Photo Behaviors in Advanced Molecular Systems, BK School of Molecular Science, and Polymer Research Institute, Pohang University of Science & Technology, Pohang 790-784, Republic of Korea
    Search for more papers by this author
  • Yecheol Rho,

    1. Department of Chemistry, Division of Advanced Materials Science, Pohang Accelerator Laboratory, Center for Electro-Photo Behaviors in Advanced Molecular Systems, BK School of Molecular Science, and Polymer Research Institute, Pohang University of Science & Technology, Pohang 790-784, Republic of Korea
    Search for more papers by this author
  • Jungwoon Jung,

    1. Department of Chemistry, Division of Advanced Materials Science, Pohang Accelerator Laboratory, Center for Electro-Photo Behaviors in Advanced Molecular Systems, BK School of Molecular Science, and Polymer Research Institute, Pohang University of Science & Technology, Pohang 790-784, Republic of Korea
    Search for more papers by this author
  • Se Hyun Kim,

    1. Department of Chemical Engineering and Polymer Research Institute, Pohang University of Science & Technology, Pohang 790-784, Republic of Korea
    Search for more papers by this author
  • Tissa Sajoto,

    1. School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, GA 30332-0400, USA
    Search for more papers by this author
  • Felix S. Kim,

    1. Department of Chemical Engineering and Department of Chemistry, University of Washington, Seattle, WA 98195-1750, USA
    Search for more papers by this author
  • Stephen Barlow,

    1. School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, GA 30332-0400, USA
    Search for more papers by this author
  • Chan Eon Park,

    1. Department of Chemical Engineering and Polymer Research Institute, Pohang University of Science & Technology, Pohang 790-784, Republic of Korea
    Search for more papers by this author
  • Samson A. Jenekhe,

    1. Department of Chemical Engineering and Department of Chemistry, University of Washington, Seattle, WA 98195-1750, USA
    Search for more papers by this author
  • Seth R. Marder,

    Corresponding author
    1. School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, GA 30332-0400, USA
    • School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, GA 30332-0400, USA
    Search for more papers by this author
  • Moonhor Ree

    Corresponding author
    1. Department of Chemistry, Division of Advanced Materials Science, Pohang Accelerator Laboratory, Center for Electro-Photo Behaviors in Advanced Molecular Systems, BK School of Molecular Science, and Polymer Research Institute, Pohang University of Science & Technology, Pohang 790-784, Republic of Korea
    • Department of Chemistry, Division of Advanced Materials Science, Pohang Accelerator Laboratory, Center for Electro-Photo Behaviors in Advanced Molecular Systems, BK School of Molecular Science, and Polymer Research Institute, Pohang University of Science & Technology, Pohang 790-784, Republic of Korea.
    Search for more papers by this author

Abstract

A new electrontransport polymer, poly{[N,N′-dioctylperylene-3,4,9,10-bis(dicarboximide)-1,7(6)-diyl]-alt-[(2,5-bis(2-ethyl-hexyl)-1,4-phenylene)bis(ethyn-2,1-diyl]} (PDIC8-EB), is synthesized. In chloroform, the polymer undergoes self-assembly, forming a nanowire suspension. The nanowire's optical and electrochemical properties, morphological structure, and field-effect transistor (FET) characteristics are investigated. Thin films fabricated from a PDIC8-EB nanowire suspension are composed of ordered nanowires and ordered and amorphous non-nanowire phases, whereas films prepared from a homogeneous PDIC8-EB solution consist of only the ordered and amorphous non-nanowire phases. X-ray scattering experiments suggest that in both nanowires and ordered phases, the PDIC8 units are laterally stacked in an edge-on manner with respect to the film plane, with full interdigitation of the octyl chains, and with the polymer backbones preferentially oriented within the film plane. The ordering and orientations are significantly enhanced through thermal annealing at 200 °C under inert conditions. The polymer film with high degree of structural ordering and strong orientation yields a high electron mobility (0.10 ± 0.05 cm2 V−1 s−1), with a high on/off ratio (3.7 × 106), a low threshold voltage (8 V), and negligible hysteresis (0.5 V). This study demonstrates that the polymer in the nanowire suspension provides a suitable material for fabricating the active layers of high-performance n-channel FET devices via a solution coating process.

Get access to the full text of this article

Ancillary