32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory
Article first published online: 18 OCT 2012
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Advanced Functional Materials
Volume 23, Issue 11, pages 1440–1449, March 20, 2013
How to Cite
Kim, G. H., Lee, J. H., Ahn, Y., Jeon, W., Song, S. J., Seok, J. Y., Yoon, J. H., Yoon, K. J., Park, T. J. and Hwang, C. S. (2013), 32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory. Adv. Funct. Mater., 23: 1440–1449. doi: 10.1002/adfm.201202170
- Issue published online: 13 MAR 2013
- Article first published online: 18 OCT 2012
- Manuscript Revised: 30 AUG 2012
- Manuscript Received: 1 AUG 2012
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