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Top-Down Fabrication of High Quality III–V Nanostructures by Monolayer Controlled Sculpting and Simultaneous Passivation

Authors

  • Shagufta Naureen,

    1. School of Information and Communication Technology, KTH-Royal Institute of Technology, Electrum 229, Kista S-14164 Sweden
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  • Naeem Shahid,

    1. School of Information and Communication Technology, KTH-Royal Institute of Technology, Electrum 229, Kista S-14164 Sweden
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  • Reza Sanatinia,

    1. School of Information and Communication Technology, KTH-Royal Institute of Technology, Electrum 229, Kista S-14164 Sweden
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  • Srinivasan Anand

    Corresponding author
    1. School of Information and Communication Technology, KTH-Royal Institute of Technology, Electrum 229, Kista S-14164 Sweden
    • School of Information and Communication Technology, KTH-Royal Institute of Technology, Electrum 229, Kista S-14164 Sweden.
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Abstract

In the fabrication of III–V semiconductor nanostructures for electronic and optoelectronic devices, techniques that are capable of removing material with monolayer precision are as important as material growth to achieve best device performances. A robust chemical treatment is demonstrated using sulfur (S)-oleylamine (OA) solution, which etches layer by layer in an inverse epitaxial fashion and simultaneously passivates the surface. The application of this process to push the limits of top-down nanofabrication is demonstrated by the realization of InP-based high optical quality nanowire arrays, with aspect ratios more than 50, and nanostructures with new topologies. The findings are relevant for other III–V semiconductors and have potential applications in III–V device technologies.

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