A Nonvolatile Spintronic Memory Element with a Continuum of Resistance States
Article first published online: 5 NOV 2012
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Advanced Functional Materials
Volume 23, Issue 15, pages 1919–1922, April 19, 2013
How to Cite
Fang, Y., Dumas, R. K., Nguyen, T. N. A., Mohseni, S. M., Chung, S., Miller, C. W. and Åkerman, J. (2013), A Nonvolatile Spintronic Memory Element with a Continuum of Resistance States. Adv. Funct. Mater., 23: 1919–1922. doi: 10.1002/adfm.201202319
- Issue published online: 14 APR 2013
- Article first published online: 5 NOV 2012
- Manuscript Received: 14 AUG 2012
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