High-Speed, Low-Voltage, and Environmentally Stable Operation of Electrochemically Gated Zinc Oxide Nanowire Field-Effect Transistors
Version of Record online: 6 NOV 2012
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Advanced Functional Materials
Volume 23, Issue 14, pages 1750–1758, April 12, 2013
How to Cite
Nasr, B., Wang, D., Kruk, R., Rösner, H., Hahn, H. and Dasgupta, S. (2013), High-Speed, Low-Voltage, and Environmentally Stable Operation of Electrochemically Gated Zinc Oxide Nanowire Field-Effect Transistors. Adv. Funct. Mater., 23: 1750–1758. doi: 10.1002/adfm.201202500
- Issue online: 4 APR 2013
- Version of Record online: 6 NOV 2012
- Manuscript Received: 31 AUG 2012
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