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Load-Controlled Roll Transfer of Oxide Transistors for Stretchable Electronics

Authors

  • Bhupendra K. Sharma,

    1. School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon, 440-476, Korea
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  • Bongkyun Jang,

    1. Department of Nano Mechanics, Nano-Convergence Mechanical Systems Research Division, Korea Institute of Machinery & Materials, 156, Gajeongbuk-ro, Yuseong-gu, Daejeon, 305-343, Korea
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  • Jeong Eun Lee,

    1. School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon, 440-476, Korea
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  • Sang-Hoon Bae,

    1. School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon, 440-476, Korea
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  • Tae Woong Kim,

    1. Next Generation B/P Development Team, OLED R&D Center, Samsung Mobile Display, Suwon, 440-476, Korea
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  • Hak-Joo Lee,

    1. Department of Nano Mechanics, Nano-Convergence Mechanical Systems Research Division, Korea Institute of Machinery & Materials, 156, Gajeongbuk-ro, Yuseong-gu, Daejeon, 305-343, Korea
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  • Jae-Hyun Kim,

    Corresponding author
    1. Department of Nano Mechanics, Nano-Convergence Mechanical Systems Research Division, Korea Institute of Machinery & Materials, 156, Gajeongbuk-ro, Yuseong-gu, Daejeon, 305-343, Korea
    • Department of Nano Mechanics, Nano-Convergence Mechanical Systems Research Division, Korea Institute of Machinery & Materials, 156, Gajeongbuk-ro, Yuseong-gu, Daejeon, 305-343, Korea.
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  • Jong-Hyun Ahn

    Corresponding author
    1. School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon, 440-476, Korea
    • School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon, 440-476, Korea
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Abstract

A stretchable and transparent In-Ga-Zn-O (IGZO) thin film transistors with high electrical performance and scalability is demonstrated. A load-controlled roll transfer method is realized for fully automated and scalable transfer of the IGZO TFTs from a rigid substrate to a nonconventional elastomeric substrate. The IGZO TFTs exhibit high electrical performance under stretching and cyclic tests, demonstrating the potentiality of the load-controlled roll transfer in stretchable electronics. The mechanics of the load-controlled roll transfer is investigated and simulated, and it is shown that the strain level experienced by the active layers of the device can be controlled to well below their maximum fracture level during transfer.

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