A Large Magnetoresistance Effect in p–n Junction Devices by the Space-Charge Effect
Version of Record online: 6 FEB 2013
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Advanced Functional Materials
Volume 23, Issue 23, pages 2918–2923, June 20, 2013
How to Cite
Yang, D., Wang, F., Ren, Y., Zuo, Y., Peng, Y., Zhou, S. and Xue, D. (2013), A Large Magnetoresistance Effect in p–n Junction Devices by the Space-Charge Effect. Adv. Funct. Mater., 23: 2918–2923. doi: 10.1002/adfm.201202695
- Issue online: 13 JUN 2013
- Version of Record online: 6 FEB 2013
- Manuscript Revised: 20 NOV 2012
- Manuscript Received: 17 SEP 2012
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