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Single-Crystalline p-Type Zn3As2 Nanowires for Field-Effect Transistors and Visible-Light Photodetectors on Rigid and Flexible Substrates

Authors

  • Gui Chen,

    1. Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
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  • Zhe Liu,

    1. Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
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  • Bo Liang,

    1. Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
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  • Gang Yu,

    1. Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
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  • Zhong Xie,

    1. Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
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  • Hongtao Huang,

    1. Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
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  • Bin Liu,

    1. Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
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  • Xianfu Wang,

    1. Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
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  • Di Chen,

    1. Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
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  • Ming-Qiang Zhu,

    Corresponding author
    1. Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
    • Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China.
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  • Guozhen Shen

    Corresponding author
    1. Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
    • Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China.
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Abstract

Zn3As2 is an important p-type semiconductor with the merit of high effective mobility. The synthesis of single-crystalline Zn3As2 nanowires (NWs) via a simple chemical vapor deposition method is reported. High-performance single Zn3As2 NW field-effect transistors (FETs) on rigid SiO2/Si substrates and visible-light photodetectors on rigid and flexible substrates are fabricated and studied. As-fabricated single-NW FETs exhibit typical p-type transistor characteristics with the features of high mobility (305.5 cm2 V−1 s−1) and a high Ion/Ioff ratio (105). Single-NW photodetectors on SiO2/Si substrate show good sensitivity to visible light. Using the contact printing process, large-scale ordered Zn3As2 NW arrays are successfully assembled on SiO2/Si substrate to prepare NW thin-film transistors and photodetectors. The NW-array photodetectors on rigid SiO2/Si substrate and flexible PET substrate exhibit enhanced optoelectronic performance compared with the single-NW devices. The results reveal that the p-type Zn3As2 NWs have important applications in future electronic and optoelectronic devices.

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