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N-Type Self-Assembled Monolayer Field-Effect Transistors and Complementary Inverters

Authors

  • Andreas Ringk,

    1. Macromolecular Chemistry I, University of Bayreuth, 95440 Bayreuth, Germany
    2. Dutch Polymer Institute (DPI), P.O. Box 902, 5600 AX Eindhoven, The Netherlands
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  • Xiaoran Li,

    1. Holst Centre/TNO, High Tech Campus 31, 5656 AE Eindhoven, The Netherlands
    2. Department of Chemical Engineering and Chemistry, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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  • Fatemeh Gholamrezaie,

    1. Dutch Polymer Institute (DPI), P.O. Box 902, 5600 AX Eindhoven, The Netherlands
    2. Philips Research Laboratories, High Tech Campus 4, 5656 AE Eindhoven, The Netherlands, Molecular Electronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
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  • Edsger C. P. Smits,

    Corresponding author
    1. Holst Centre/TNO, High Tech Campus 31, 5656 AE Eindhoven, The Netherlands
    • Holst Centre/TNO, High Tech Campus 31, 5656 AE Eindhoven, The Netherlands.
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  • Alfred Neuhold,

    1. Institute of Solid State Physics, Graz University of Technology, Petersgasse 16, A-8010 Graz, Austria
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  • Armin Moser,

    1. Institute of Solid State Physics, Graz University of Technology, Petersgasse 16, A-8010 Graz, Austria
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  • Cees Van der Marel,

    1. Philips Innovation Services–Materials Analysis, High Tech Campus 11, 5656 AE Eindhoven, The Netherlands
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  • Gerwin H. Gelinck,

    1. Holst Centre/TNO, High Tech Campus 31, 5656 AE Eindhoven, The Netherlands
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  • Roland Resel,

    1. Institute of Solid State Physics, Graz University of Technology, Petersgasse 16, A-8010 Graz, Austria
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  • Dago M. de Leeuw,

    1. Philips Research Laboratories, High Tech Campus 4, 5656 AE Eindhoven, The Netherlands, Molecular Electronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
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  • Peter Strohriegl

    Corresponding author
    1. Macromolecular Chemistry I, University of Bayreuth, 95440 Bayreuth, Germany
    • Macromolecular Chemistry I, University of Bayreuth, 95440 Bayreuth, Germany
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Abstract

This work describes n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a perylene derivative which is covalently fixed to an aluminum oxide dielectric via a phosphonic acid linker. N-type SAMFETs spontaneously formed by a single layer of active molecules are demonstrated for transistor channel length up to 100 μm. Highly reproducible transistors with electron mobilities of 1.5 × 10−3 cm2 V−1 s−1 and on/off current ratios up to 105 are obtained. By implementing n-type and p-type transistors in one device, a complimentary inverter based solely on SAMFETs is demonstrated for the first time.

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