Get access
Advertisement

Polarization Dynamics in Ferroelectric Capacitors: Local Perspective on Emergent Collective Behavior and Memory Effects

Authors

  • Rama K. Vasudevan,

    1. School of Materials Science and Engineering, University of New South Wales, Kensington, 2052, Australia
    Search for more papers by this author
  • Daniel Marincel,

    1. Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 USA
    Search for more papers by this author
  • Stephen Jesse,

    1. The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA, E-mail: sergei2@ornl.gov
    Search for more papers by this author
  • Yunseok Kim,

    1. The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA, E-mail: sergei2@ornl.gov
    Current affiliation:
    1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, South Korea
    Search for more papers by this author
  • Amit Kumar,

    1. The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA, E-mail: sergei2@ornl.gov
    Search for more papers by this author
  • Sergei V. Kalinin,

    1. The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA, E-mail: sergei2@ornl.gov
    Search for more papers by this author
  • Susan Trolier-McKinstry

    Corresponding author
    1. Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 USA
    • Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 USA.
    Search for more papers by this author

Abstract

Functional properties of ferroelectric materials depend both on the residual domain states and on the mobility of domain walls in response to the applied electric and stress fields. This paper reviews the use of multidimensional scanning probe microscopy to assess these factors in the time- and voltage domains, with an emphasis on the manner in which domain walls respond collectively to stimuli. It is found that in many PbZr1-xTixO3-based capacitors, domain wall motion is correlated over length scales that exceed the domain and grain sizes by orders of magnitude, suggesting emergent collective electromechanical behavior. The role of mechanical boundary conditions and field history on the domain wall contributions and the stability of the ferroelectric domain state are discussed.

Get access to the full text of this article

Ancillary