SEARCH

SEARCH BY CITATION

Keywords:

  • chemical vapor deposition;
  • crystal engineering;
  • crystal growth;
  • germanium;
  • silicon
Thumbnail image of graphical abstract

A method for the growth of high-quality single-crystal germanium on amorphous silicon by ultrahigh vacuum chemical vapor deposition at temperatures less than 450 °C is presented on page 1049 by Jurgen Michel and co-workers. The growths proceed through constrictive channels and emerge with improved properties compared to as-deposited germanium. The growth mechanism and its implications for design of the growth structure are described.