Frontispiece

Crystal Growth: Single-Crystal Germanium Growth on Amorphous Silicon (Adv. Funct. Mater. 5/2012)

  1. Kevin A. McComber1,
  2. Xiaoman Duan1,
  3. Jifeng Liu1,2,
  4. Jurgen Michel1,*,
  5. Lionel C. Kimerling1

Article first published online: 1 MAR 2012

DOI: 10.1002/adfm.201290025

Issue

Advanced Functional Materials

Advanced Functional Materials

Volume 22, Issue 5, page 1048, March 7, 2012

Additional Information

How to Cite

McComber, K. A., Duan, X., Liu, J., Michel, J. and Kimerling, L. C. (2012), Crystal Growth: Single-Crystal Germanium Growth on Amorphous Silicon (Adv. Funct. Mater. 5/2012). Adv. Funct. Mater., 22: 1048. doi: 10.1002/adfm.201290025

Author Information

  1. 1

    Massachusetts Institute of Technology, 77 Massachusetts Avenue, Room 13-4110, Cambridge, MA 02139, USA

  2. 2

    Thayer School of Engineering, Dartmouth College, 8000 Cummings Hall, Rm. C227, Hanover, NH 03755, USA

*Massachusetts Institute of Technology, 77 Massachusetts Avenue, Room 13-4110, Cambridge, MA 02139, USA.

Publication History

  1. Issue published online: 1 MAR 2012
  2. Article first published online: 1 MAR 2012

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Keywords:

  • chemical vapor deposition;
  • crystal engineering;
  • crystal growth;
  • germanium;
  • silicon
Thumbnail image of graphical abstract

A method for the growth of high-quality single-crystal germanium on amorphous silicon by ultrahigh vacuum chemical vapor deposition at temperatures less than 450 °C is presented on page 1049 by Jurgen Michel and co-workers. The growths proceed through constrictive channels and emerge with improved properties compared to as-deposited germanium. The growth mechanism and its implications for design of the growth structure are described.

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