Spin-polarized transport in organic spin valves remains poorly understood, despite their promising properties. On page 1180, Michel P. de Jong and co-workers report a joint experimental and modeling study on C60-based spin valves that constitutes a significant step forward. For spin-polarized tunneling via multiple intermediate states in the C60 layer, the magnetoresistance decreases with the number of tunnel steps regardless of the value of the spin life-time, which is analogous to conductivity mismatch in diffusive semiconductor systems.
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