Frontispiece

Memristors: Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor (Adv. Funct. Mater. 13/2012)

  1. Zhong Qiang Wang1,
  2. Hai Yang Xu1,*,
  3. Xing Hua Li1,
  4. Hao Yu1,
  5. Yi Chun Liu1,*,
  6. Xiao Juan Zhu2

Article first published online: 3 JUL 2012

DOI: 10.1002/adfm.201290076

Issue

Advanced Functional Materials

Advanced Functional Materials

Volume 22, Issue 13, page 2758, July 10, 2012

Additional Information

How to Cite

Wang, Z. Q., Xu, H. Y., Li, X. H., Yu, H., Liu, Y. C. and Zhu, X. J. (2012), Memristors: Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor (Adv. Funct. Mater. 13/2012). Adv. Funct. Mater., 22: 2758. doi: 10.1002/adfm.201290076

Author Information

  1. 1

    Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, P. R. China

  2. 2

    The institute of Genetics and Cytology, Northeast Normal University, Changchun 130024, P. R. China

*Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, P. R. China.

Publication History

  1. Issue published online: 3 JUL 2012
  2. Article first published online: 3 JUL 2012

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Keywords:

  • memristors;
  • synaptic devices;
  • learning and memory functions;
  • amorphous InGaZnO;
  • oxygen ion migration/diffusion
Thumbnail image of graphical abstract

On page 2759 Hai Yang Xu, Yi Chun Liu, and co-workers demonstrate an inorganic synapse based on an amorphous InGaZnO memristor. Such a single device, with its inherent learning and memory abilities, bears striking resemblance in certain functions to the biological synapse. In particular, the “learning-experience” function is obtained for the first time.

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