Organic Electronics: High-Performance Top-Gated Organic Field-Effect Transistor Memory using Electrets for Monolithic Printed Flexible NAND Flash Memory (Adv. Funct. Mater. 14/2012)

Authors

  • Kang-Jun Baeg,

    Corresponding author
    1. Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeongno, Yuseong-gu, Daejeon 305-700, Republic of Korea
    Current affiliation:
    1. Department of Chemistry, Northwestern University 2145 Sheridan Road, Evanston, IL 60208, USA
    • Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeongno, Yuseong-gu, Daejeon 305-700, Republic of Korea
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  • Dongyoon Khim,

    1. Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea
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  • Juhwan Kim,

    1. Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea
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  • Byung-Do Yang,

    1. College of Electrical and Computer Engineering, Department of Electronics Engineering, Chungbuk National University, 410 Seongbong-ro, Heungduk-gu, Cheongju, Chungbuk, 361-76, Republic of Korea
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  • Minji Kang,

    1. Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea
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  • Soon-Won Jung,

    1. Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeongno, Yuseong-gu, Daejeon 305-700, Republic of Korea
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  • In-Kyu You,

    1. Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeongno, Yuseong-gu, Daejeon 305-700, Republic of Korea
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  • Dong-Yu Kim,

    1. Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea
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  • Yong-Young Noh

    Corresponding author
    1. Department of Chemical Engineering, Hanbat National University, San 16-1, Dukmyung-dong, Yuseong-gu, Daejeon 305-719, Republic of Korea
    • Department of Chemical Engineering, Hanbat National University, San 16-1, Dukmyung-dong, Yuseong-gu, Daejeon 305-719, Republic of Korea.
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Abstract

original image

Monolithically inkjet-printed, flexible 256-bit polymer NAND flash memory is demonstrated by using a chargeable polymer electret for the memory cell and polystyrene for ground- and bit-line select transistors as a dielectric layer. On page 2915, Kang-Jun Baeg, Yong-Young Noh, and co-workers report that the first demonstration of an inkjet-printed, flexible NAND flash memory array may move up the commercialization of organic memory devices.

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