Photosensors: Fabrication of a Large-Area Al-Doped ZnO Nanowire Array Photosensor with Enhanced Photoresponse by Straining (Adv. Funct. Mater. 18/2012)

Authors

  • Ruey-Chi Wang,

    Corresponding author
    1. Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 81148, Taiwan
    • Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 81148, Taiwan
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  • Hsin-Ying Lin,

    1. Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
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  • Chao-Hung Wang,

    1. Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
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  • Chuan-Pu Liu

    Corresponding author
    1. Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
    2. Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan, Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 70101, Taiwan, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan
    • Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan.
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Abstract

original image

A large-area flexible nanowire array photosensor is developed by directly growing horizontal Al-doped ZnO nanowire arrays across Au electrodes on a flexible substrate. This is reported by Ruey-Chi Wang, Chuan-Pu Liu, and co-workers on page 3875 and shown in the false-color scanning electron microscopy (SEM) image. Good nanowire quality and the device layout lead to ultrahigh photoresponsivity and sensitivity. Tensile strain further enhances the photoresponsivity.

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