Spintronics: Large Tunnel Magnetoresistance in Epitaxial Oxide Spin-Filter Tunnel Junctions (Adv. Funct. Mater. 21/2012)

Authors

  • Takayuki Harada,

    1. Department of Applied Chemistry, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
    Current affiliation:
    1. Institute for Solid State Physics, The University of Tokyo, 5-1-5, Kashiwanoha, Kashiwa, Chiba, 277-8581, Japan
    Search for more papers by this author
  • Isao Ohkubo,

    Corresponding author
    1. Department of Applied Chemistry, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
    Current affiliation:
    1. National Institute for Materials Science, 1-1 Namiki Tsukuba-shi, Ibaraki 305-0044, Japan; OHKUBO.Isao@nims.go.jp
    • Department of Applied Chemistry, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan.
    Search for more papers by this author
  • Mikk Lippmaa,

    1. Institute for Solid State Physics, The University of Tokyo, 5-1-5, Kashiwanoha, Kashiwa, Chiba, 277-8581, Japan
    Search for more papers by this author
  • Yasuaki Sakurai,

    1. Department of Applied Chemistry, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
    Search for more papers by this author
  • Yuji Matsumoto,

    1. Materials and Structures Laboratory, Tokyo Institute of Technology, 4259, Midori-ku Nagatsuta, Yokohama, 226-8503, Japan
    Search for more papers by this author
  • Shunsuke Muto,

    1. Department of Materials, Physics, and Energy Engineering, Graduate School of Engineering Nagoya University, Nagoya, 464-8603, Japan
    Search for more papers by this author
  • Hideomi Koinuma,

    1. Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5, Kashiwanoha, Kashiwa, Chiba, 277-8568, Japan
    Search for more papers by this author
  • Masaharu Oshima

    1. Department of Applied Chemistry, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
    Search for more papers by this author

Abstract

original image

A spin-polarized-current generator is a fundamental device in spintronics. As reported on page 4471, Isao Ohkubo and co-workers have developed a highperformance spin-filter tunnel junction by growing an atomic-layer-controlled oxide multilayer. In this device, up-spin electrons can selectively tunnel through a nanometer-thick ferromagnetic insulator, while down-spin electrons are reflected. The image shows a false-colored cross-sectional transmission electron microscope image of the device.

Ancillary