Domain Wall Displacement is the Origin of Superior Permittivity and Piezoelectricity in BaTiO3 at Intermediate Grain Sizes
Version of Record online: 3 SEP 2013
© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Advanced Functional Materials
Volume 24, Issue 7, pages 885–896, February 19, 2014
How to Cite
Ghosh, D., Sakata, A., Carter, J., Thomas, P. A., Han, H., Nino, J. C. and Jones, J. L. (2014), Domain Wall Displacement is the Origin of Superior Permittivity and Piezoelectricity in BaTiO3 at Intermediate Grain Sizes. Adv. Funct. Mater., 24: 885–896. doi: 10.1002/adfm.201301913
- Issue online: 13 FEB 2014
- Version of Record online: 3 SEP 2013
- Manuscript Revised: 16 JUL 2013
- Manuscript Received: 5 JUN 2013
- U.S. Department of the Army. Grant Number: W911NF-09-1-0435
- U.S. National Science Foundation. Grant Number: DMR-0746902
- Florida Cluster for Advanced Smart Sensor Technologies (FCASST)
- U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences. Grant Number: DE-AC02-06CH11357
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