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Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures

Authors

  • Jie Shang,

    1. CAS Key Laboratory of Magnetic, Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, P. R. China
    2. Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, P. R. China
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  • Gang Liu,

    Corresponding author
    1. CAS Key Laboratory of Magnetic, Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, P. R. China
    2. Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, P. R. China
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  • Huali Yang,

    1. CAS Key Laboratory of Magnetic, Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, P. R. China
    2. Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, P. R. China
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  • Xiaojian Zhu,

    1. CAS Key Laboratory of Magnetic, Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, P. R. China
    2. Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, P. R. China
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  • Xinxin Chen,

    1. CAS Key Laboratory of Magnetic, Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, P. R. China
    2. Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, P. R. China
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  • Hongwei Tan,

    1. CAS Key Laboratory of Magnetic, Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, P. R. China
    2. Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, P. R. China
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  • Benlin Hu,

    1. CAS Key Laboratory of Magnetic, Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, P. R. China
    2. Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, P. R. China
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  • Liang Pan,

    1. CAS Key Laboratory of Magnetic, Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, P. R. China
    2. Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, P. R. China
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  • Wuhong Xue,

    1. CAS Key Laboratory of Magnetic, Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, P. R. China
    2. Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, P. R. China
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  • Run-Wei Li

    Corresponding author
    1. CAS Key Laboratory of Magnetic, Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, P. R. China
    2. Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, P. R. China
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Abstract

An all-oxide transparent resistive random access memory (T-RRAM) device based on hafnium oxide (HfOx) storage layer and indium-tin oxide (ITO) electrodes is fabricated in this work. The memory device demonstrates not only good optical transmittance but also a forming-free bipolar resistive switching behavior with room-temperature ROFF/RON ratio of 45, excellent endurance of ≈5 × 107 cycles and long retention time over 106 s. More importantly, the HfOx based RRAM carries great ability of anti-thermal shock over a wide temperature range of 10 K to 490 K, and the high ROFF/RON ratio of ≈40 can be well maintained under extreme working conditions. The field-induced electrochemical formation and rupture of the robust metal-rich conductive filaments in the mixed-structure hafnium oxide film are found to be responsible for the excellent resistance switching of the T-RRAM devices. The present all-oxide devices are of great potential for future thermally stable transparent electronic applications.

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