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Photo-Insensitive Amorphous Oxide Thin-Film Transistor Integrated with a Plasmonic Filter for Transparent Electronics

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Abstract

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A novel amorphous-indium-gallium-zinc-oxide-based application with stable switching characteristics under negative bias illumination is shown. Metallic nanohole-based plasmonic filters are used for tuning the spectrum of the ambient light source, and the photosensitivity of the a-IGZO-TFT is investigated within a selectively controlled spectral range. The suggested thin-film transistors show greatly improved stability even in a negative bias illumination stress environment.

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